Growth, Characterization and Integration of Si/SiGe Heterostructures into TUNFETs
نویسنده
چکیده
Si/Si1-xGex Heterostructured nanowires are grown by Reduced Pressure-Chemical Vapor Deposition (RP-CVD) using catalyst assisted Vapor Liquid Solid (VLS) and Vapor Solid Solid (VSS) method. We aim to obtain compositional (Si/Si1xGex) and/or doped (p-i-n) heterostructures with abrupt interfaces. The resulting NW heterostructures are structurally characterized using e.g. transmission electron microscopy (TEM), X-Ray diffraction and confocal Raman microscopy so that the optimum synthesis parameters can be identified. Then, doping level is evaluated by four points contacts techniques and local probes measurements to study the dopants distribution. Kelvin Probe force microscopy (KPFM) and scanning capacitive microscopy (SCM) will be used for the characterization of dopant distribution. Further, these Nanowire structures are integrated to TFET applications, a detailed I-V characterization will be conducted on these devices in order to assess their performances in terms Ion/Ioff levels, subthreshold slope, and low frequency noise.
منابع مشابه
MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with high hole mobilities can also be grown on relaxed SiGe. We review progress in strained Si and dual channel heterostructures, and also introduce high hole mobility digital allo...
متن کاملNanomembrane-based materials for Group IV semiconductor quantum electronics
Strained-silicon/relaxed-silicon-germanium alloy (strained-Si/SiGe) heterostructures are the foundation of Group IV-element quantum electronics and quantum computation, but current materials quality limits the reliability and thus the achievable performance of devices. In comparison to conventional approaches, single-crystal SiGe nanomembranes are a promising alternative as substrates for the e...
متن کاملCharacterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane.
We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities...
متن کاملExtraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained- Ge type-II heterostructures on relaxed SiGe substrates
Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantummechanical capacitance-voltage (CV) simulations were fit to experimental CV measurements to extract the band alignment of the strained layers. The valence-band offset of the strained-Si/str...
متن کاملSilicon Germanium Heterostructures in Electronics:- The Present and the Future
A review is presented of Si / Si1-xGex heterostructures which may be used for electronic transistors along with more exotic designs of electrical devices including quantum effect devices. Important issues including integration of the devices with present technology along with defect problems will be presented. The final section will explore exotic quantum devices and review the potential for di...
متن کامل